A DC to 4GHz Limiter Based in a 0.5um GaAs pHEMT Process

A DC-4GHz limiter is presented in this paper. The anti-parallel diode structure is employed as the core unit of the limiter. The second stage is designed further to limit the power leaked from the previous stage. Snake-shape line is used in the layout routing to reduce the area of the proposed limiter. The limiter is designed and fabricated in a 0.5 μm GaAs process. The measurement results show that the small signal insertion loss is of -0.1dB and the input/output return loss are both less than -20dB in the operating frequency band. The chip area is 1.12mm*0.7mm.