A Solid Electrolyte ZnO Thin Film Transistor for classification of spoken digits using Reservoir Computing

The duration and interval of the input signal in two terminal memristor based reservoir systems is constrained by the decay time of a conventional memristor. Here, we demonstrate that the third terminal of a Solid Electrolyte
$\text{ZnO}/\text{Ta}_{2}\mathrm{O}_{5}$
Thin-film Transistor (SE-FET) can be used to control the decay time by using a variable read voltage, without any additional circuit elements. Using this approach, we have benchmarked the performance of our SE-FET based RC system for a task of recognition of spoken digits with a high accuracy of 99.4%.