Continuous Liquid Metal Printing for Rapid Metal Oxide TFT Integration

We present a rapid liquid metal printing process (CLMP) enabling fabrication of high-mobility metal oxide semiconducting channels in less than 3 seconds. We use this process to engineer heterostructure TFTs with channels consisting of 3 nm layers of
$\text{In}_{2}\mathrm{O}_{3}$
and
$\text{Ga}_{2}\mathrm{O}_{3}$
with improved subthreshold slope and enhanced on-state performance
$(\mathrm{u}_{\text{ave}}\sim 14\text{cm}^{2}/\text{Vs})$
. We report the influence of deposition temperature and speed, investigating crystallinity and grain morphology of this class of 2D oxide semiconductors.