(InGa)As/GaAs quantum-dot diode lasers for 1.3-/spl mu/m optical fibre communication

The self-consistent optical-electrical-thermal-gain model of the oxide-confined edge-emitting diode laser has been used to simulate the room-temperature operation of the long-wavelength 1.3-/spl mu/m quantum-dot (InGa)As/GaAs diode laser. Validity of the model has been verified using some experimental results for comparison. An impact of quantum-dot density on laser operation characteristics as well as temperature dependence of lasing threshold have been discussed.