High Performance SiC Power Module Based on Repackaging of Discrete SiC Devices

Increased adoption of electric vehicles, photovoltaic, and battery energy storage systems is driving the need for high-current SiC power modules. The state-of-the-art multichip module is substantially more expensive than the IGBT module. This article proposes a cost-effective packaging methodology for high-power SiC intelligent power modules (IPMs) with discrete SiC devices. The proposed IPM integrates the gate drivers, decoupling capacitors, snubbers, discrete SiC devices, direct bond copper, base plate, temperature sensors, and overcurrent protection circuits, achieving very low loop inductance and thermal resistance, and more than 50% cost reduction. A 1200 V/480 A/2.15 mΩ half-bridge IPM is presented for comparison with commercial counterparts. A 1200 V/240 A/4.3 mΩ six-phase IPM is developed, and its performance is experimentally verified.