Influence of design and process parameters on properties of edge-on silicon strip detector

Edge-on silicon strip detectors were designed and fabricated. The main detector parameters of importance such as: leakage current, dynamic resistance of the integrated FOXFET biasing structure and radiation hardness on ionizing radiation have been investigated. The irradiation tests were carried-out using a Co/sup 60/ gamma-ray source up to 0.2 Mrd (SiO/sub 2/) at different gate electric fields. The optimized low temperature segregation anneal results in substantial decrease of the detector leakage current. A dynamic resistance as high as 2 G/spl Omega/ was achieved on non-irradiated detectors for a channel width and length of 10 /spl mu/m. The main factors influencing the radiation hardness of the strip detector with a FOXFET biasing structure are leakage current and strip potential. The leakage current increases the detector noise and lowers the dynamic resistance of the FOXFET biasing structure. The strip voltage shift towards positive voltages shows a strong dependence on the gate electric field applied during the irradiation.