A Novel Charge Pumping Technique With Gate-Induced Drain Leakage Current

A charge pumping (CP) technique with gate-induced drain leakage (GIDL) current is proposed to extract interface trap density (
${N}_{\text {it}}{)}$
in GAA MOSFETs. This GIDL CP characterizes the
${N}_{\text {it}}$
even for an advanced MOSFET with a floating body, small size and a thin gate dielectric, which are difficult to analyze by a conventional CP technique. Using LabVIEW control, a synchronized voltage pulse was automated, and the generated holes were effectively recombined with the traps for
${N}_{\text {it}}$
extraction. In addition, the proposed CP was confirmed to be an analysis tool that can reliably extract the
${N}_{\text {it}}$
while minimizing device stress during the measurement.