Small Signal Analysis of Stacked Gate GAA FinFET at THz Frequency for RF and Microwave Applications

In this paper, the small signal behavior of gate stack gate all around (GS-GAA) FinFET in terms of scattering parameters was studied, and the findings are compared with conventional tri-gate FinFET and GAA FinFET at the THz frequency range using the Atlas device simulator. Compared to its competing devices, the GS-GAA FinFET design exhibits a notable increase in the forward/reverse transmission coefficient and a decrease in the input/output reflection coefficient owing to the enhanced transconductance. In addition, the effect that channel doping and gate length have on the scattering parameters has been looked at as well. The major goal of this research is to establish optimal channel doping and gate length for future RF applications. The simulated results disclose that decreasing the channel doping and raising the gate length improve the scattering parameters.