Modeling of carrier lifetime based on Deep-Level Transient Spectroscopy for power PIN diodes

The dynamic performances of PIN diodes are very difficult to predict with Technology Computer-Aided Design (TCAD) simulation tools, especially when the carrier lifetime is adjusted. The standard simulation model used in TCAD tools for carrier lifetime is based on Shockley-Read-Hall (SRH) recombination theory. This model is not sufficient as it considers the presence of only one deep energy level located at the material mid-gap. Used as a lifetime killer, Platinum doping introduces several deep energy levels facilitating the minority carrier recombination. Thus, a new approach based on trap physical description is performed using Deep Level Transient Spectroscopy (DLTS) measurement technique. This approach has significantly reduced the large mismatch observed between the PIN diode turn-off measurements and the standard simulation model results.