Study and Analysis of Electrical Behavior for ZnTe/InSb Heterojunction

Hetero-junctions have acquired a great attention in the semiconductor device domain from the past years, due to many of its special characteristics and its great efficiency in several applications. In this report we have simulated a novel group II-chalcogenide binary alloy-based single heterojunction device by taking Indium Antimonide (InSb) as the substrate layer and Zinc Telluride (ZnTe) as the epitaxial layer. Thorough analysis has been performed to investigate the electrical behavior of this proposed device. Additionally, the effect of epitaxial layer thickness and epitaxial doping on critical parameters – forward junction current and junction electron density, reverse junction current and junction electron density are studied and simulated to optimize the device performance.