An 8nm MOS and its Applications

An 8nm MOSFET and CMOSFET have been demonstrated in this paper. The present MOS is working with a minimal leakage current of 5.346 x 10-10 A/um having a minimal channel length 18.6nm at thermal voltage of 25.85mV. Indium gallium arsenide has been chosen as a semiconductor material and as an oxide agent hafnium oxide has been deployed, as the alternative candidates of silicon. It has been found that the 8nm MOS has achieved drive current 5.557 x 10-5 A/um, threshold voltage 0.358v at supplied drain voltage of 0.005V. Apart from that an inverter circuit has been simulated using the CMOS which has been designed using the present 8nm MOSFET by deploying the alternatives of Silicon and the performance of both the inverter circuit and the CMOS device along with the 8nm MOSFET has been showcased in this paper.