A Review Article on the usage of Different Materials and Different Device architectures in the Design of Tunnel Field Effect Transistor

There is a great need in the technological environment of today for devices which are inexpensive and draw the least amount of power. Tunnel Field Effect Transistors (TFETs) are well suited for use in the next-generation semiconductor industries due to their important ability to display steep switching properties. Broadly, the band-to-band tunneling method of quantum mechanical carrier production is used by a TFET. Low subthreshold swing (SS), low supply voltage, and lower leakage currents are the characteristic parameters which are expected from any TFET device. A large variety of materials have been used by researchers to improve upon the characteristics of Tunnel FETs. Very successfully, researchers have been able to suggest the design of devices that boast lower SS values and work on lesser values of power supplies. This article presents a review about the advantages and associated limitations relating to the usage of different materials and device architectures in some of the most contemporary suggested designs of TFETs.