Temperature Characteristics of 10nm N- and P-Channel Si-FinFET Structure

The impact of working temperature on the electrical properties of FinFETs is discussed in this research. The properties of FinFET have been produced using the simulation tool Multi-Gate Field Effect Transistors (MuGFET) under a range of temperature from (T=275 K°) to (T=375 K°). First, simulations are done to determine the current-voltage characteristics for N- and P-channel FinFET structures with this temperature range and fixed channel Fin parameters. As a temperature nano-sensor, the greater ΔI at the applied voltage with a range of 0 to 1 V at a diode mode connection has been taken into consideration for the FinFET's optimum temperature sensitivity. The maximum temperature sensitivity and ΔI for both N- and P-channel FinFETs that happen at Vd=Vg=0.6 V and N-channel current are around 1.36 times that of a P-channel FinFET.