Simulation and Comparison of Voltage and Current Characteristics of Finfet by Varying its Channel Dimension with Single Gate MOSFET for Improved Conductivity

FinFET and single gate MOSFET current and voltage characteristics are simulated by varying the channel dimension, which can vary from 5 nm to 80 nm. By adjusting channel size (width) spanning from 5 nm to 80 nm in the NANO HUB tool simulation environment, the electrical conductance of FINFET $(\mathbf{n}=320)$ and single gate MOSFET $(\mathbf{n}=320)$ were compared. FINFET has a much greater conductance $(4.38^{*}10$- 4 mho, $\mathbf{P} \ 0.05$) than single gate MOSFET $(12.64^{*}10-6 \ \mathbf{mho})$.80 nm was the optimal channel width for maximum conductivity in FINFET and single gate MOSFET. Within the confines of this investigation, a FINFET with a channel width of 80 nm offers the optimum conductivity.