Improving High Resistance State in One-Transistor-One-Resistor (1T1R) Structure Resistance Random Access Memory With a Body-Biased Method

Resistance random access memory (RRAM) is considered one of the most promising candidates for the next-generation nonvolatile memory (NVM). Previous research has also reported the pinch-off effect on the one-transistor-one-resistor (1T1R) device structure induced by transistor operation. Therefore, a thorough understanding of the relationship between transistor and RRAM operations can help reach the most out of the 1T1R device. In this work, a complete investigation is made regarding different operation parameters affecting the variations of high resistance state (HRS) within the 1T1R device. A body-RESET method has also been proposed to mitigate the limitation from the transistor to achieve better HRS results without affecting the low resistance state (LRS) for the 1T1R device. Finally, the discussion on the difference of HRS and LRS of the 1T1R structure is made based on both p-type and n-type transistors, which also provides a possible means regarding the 1T1R device operation to increase memory without further degradation of the device performance.