Compact Modeling of Emerging IC Devices for Technology-Design Co-development

This paper presents compact models of GAA, MRAM, ferroelectric logic, and memory devices, as well as cryogenic CMOS that supports quantum computing. These compact models achieve microseconds fast simulation of the charge and current of devices using analytical functions as solutions to complex device physics problems aided by adjustable parameters. Though not as predictive as TCAD, each model can simulate the characteristics and manufacturing variabilities of the device as accurately and much faster. Early availability of compact models of emerging devices is a necessity for technology-design co-development using these devices.