RRAM, Device, Model and Memory

The memristor is an innovative passive electrical device that has gained popularity in recent years as a potential candidate for next-generation non-volatile memory (NVM) and analog computing. This popularity stems from the memristor’s ability to store information in a manner that is inaccessible to external power sources. It is possible to electrically modify the resistance state, and this change will be retained even after the external bias has been removed. This is a distinctive electrical characteristic of the device. In this paper, we present a comprehensive presentation and illustration about SkyWater memristor device and model. A read/write operation for a standalone memristor (1R), and a 1 transistor 1 memristor (1T1R) were conducted. The RRAM successfully can be written and read 1-bit information by dividing the resistance of the memristor (memristance) into two states of RON=10.07 KΩ as a bit 1 and ROFF=3.38 MΩ as a bit 0.