By Topic

IEEE Journal of the Electron Devices Society This IEEE Publication is an Open Access only journal. Open Access provides unrestricted online access to peer-reviewed journal articles.

Issue 1 • Jan. 2014

Filter Results

Displaying Results 1 - 5 of 5
  • Table of contents

    Publication Year: 2014, Page(s): C1
    Request permission for commercial reuse | PDF file iconPDF (382 KB)
    Freely Available from IEEE
  • IEEE Journal of the Electron Devices Society publication information

    Publication Year: 2014, Page(s): C2
    Request permission for commercial reuse | PDF file iconPDF (143 KB)
    Freely Available from IEEE
  • New Analytical Model for Nanoscale Tri-Gate SOI MOSFETs Including Quantum Effects

    Publication Year: 2014, Page(s):1 - 7
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (7633 KB) | HTML iconHTML

    In this paper, an analytical model for tri-Gate (TG) MOSFETs considering quantum effects is presented. The proposed model is based on the analytical solution of Schrodinger-Poisson's equation using variational approach. An analytical expression of the inversion charge distribution function (ICDF) or wave function for the TG MOSFETs has been developed. This obtained ICDF is used to calculate the de... View full abstract»

    Open Access
  • IEEE Journal of the Electron Devices Society information for authors

    Publication Year: 2014, Page(s): C3
    Request permission for commercial reuse | PDF file iconPDF (105 KB)
    Freely Available from IEEE
  • [Blank page - back cover]

    Publication Year: 2014, Page(s): C4
    Request permission for commercial reuse | PDF file iconPDF (5 KB)
    Freely Available from IEEE

Aims & Scope

The IEEE Journal of the Electron Devices Society (J-EDS) is an open access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices.

Full Aims & Scope

Meet Our Editors

Editor-In-Chief
Dr. Renuka P. Jindal