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IBM Journal of Research and Development

Issue 6 • Nov. 1990

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Displaying Results 1 - 16 of 16
  • Preface

    Publication Year: 1990, Page(s): 794
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (128 KB)

    The trend in the development of digital and optoelectronic devices has been toward higher speed and smaller size, driven by the need for more powerful processors, computing systems, and communications systems. The formation of these smaller, more aggressive structures has been facilitated by improvements in our ability to fabricate and process materials. In many cases, new classes of devices, such... View full abstract»

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  • Design of low-temperature thermal chemical vapor deposition processes

    Publication Year: 1990, Page(s):795 - 805
    Cited by:  Patents (4)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (961 KB)

    The importance of an integrated approach involving synthetic chemistry, physical chemistry, and chemical engineering to the development of new thermal chemical vapor deposition (CVD) processes for the production of thin-film electronic materials is discussed. Particular emphasis is placed on choosing precursor molecules with facile thermal decomposition pathways that lead to pure films at low temp... View full abstract»

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  • Low-temperature Si and Si:Ge epitaxy by ultrahigh-vacuum/chemical vapor deposition: Process fundamentals

    Publication Year: 1990, Page(s):806 - 815
    Cited by:  Papers (3)  |  Patents (7)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (893 KB)

    This paper is an overview of work at the IBM Thomas J. Watson Research Center on the chemical and physical considerations underlying the development of a low-temperature chemical vapor deposition process, designated ultra high-vacuum/chemical vapor deposition (UHV/CVD). The origins of the rigorous vacuum and chemical purity requirements of the process are discussed. Operating in the range of 500&#... View full abstract»

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  • Selective epitaxial growth of silicon and some potential applications

    Publication Year: 1990, Page(s):816 - 827
    Cited by:  Papers (4)  |  Patents (7)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1095 KB)

    In the selective epitaxial growth (SEG) of silicon, growth occurs only on exposed silicon areas of a silicon substrate. Substrate regions on which silicon growth is not desired are masked by a dielectric film, typically silicon dioxide or silicon nitride. Use of the process permits the fabrication of novel silicon devices and integrated-circuit structures. In this paper, an overview is presented o... View full abstract»

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  • Advances in metalorganic vapor-phase epitaxy

    Publication Year: 1990, Page(s):828 - 848
    Cited by:  Papers (1)  |  Patents (5)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1839 KB)

    Metalorganic vapor-phase epitaxy (MOVPE) has become a well-established technique for the epitaxial growth of layers of III–V compound semiconductors since its introduction in 1968. Use has been made of the technique to produce such layers and associated devices to very demanding specifications. This paper describes MOVPE, followed by an overview of work at the IBM Thomas J. Watson Research ... View full abstract»

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  • Diamondlike carbon films by rf plasma-assisted chemical vapor deposition from acetylene

    Publication Year: 1990, Page(s):849 - 857
    Cited by:  Patents (46)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (813 KB)

    This paper is an overview of studies performed at the IBM Thomas J. Watson Research Center on diamondlike carbon (hydrogenated amorphous carbon) films, including some recent results on their tribological properties. The films were prepared by rf plasma-assisted chemical vapor deposition (PACVD) from acetylene. Their structure and composition were characterized by a variety of methods such as X-ray... View full abstract»

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  • On-chip wiring for VLSI: Status and directions

    Publication Year: 1990, Page(s):858 - 867
    Cited by:  Papers (5)  |  Patents (7)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (878 KB)

    The thirty-year history of silicon integrated circuits has resulted in dramatic increases in both the number of devices per chip and circuit speed. A consequence of scaling to submicron dimensions is that the major component of propagation delay will transfer from the devices to the interconnecting “wires.” Additionally, increased integration, together with scaling, leads to a need f... View full abstract»

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  • Surface and interfacial energies of CoSi2 and Si films: Implications regarding formation of three-dimensional silicon-silicide structures

    Publication Year: 1990, Page(s):868 - 874
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (713 KB)

    Formation of three-dimensional, multilevel structures consisting of epitaxial silicon and silicide films is currently of interest in the microelectronics technology. However, such structures have been difficult to produce because of surface wetting differences. To obtain associated surface energy information, an analysis was carried out of published data on the kinetics of crystallization of amorp... View full abstract»

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  • Surface chemistry of the WF6-based chemical vapor deposition of tungsten

    Publication Year: 1990, Page(s):875 - 883
    Cited by:  Patents (16)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (723 KB)

    This paper is an overview of work at the IBM Thomas J. Watson Research Center on chemical aspects of the WF6-based chemical vapor deposition of tungsten. The focus is on two deposition processes. In the first process, tungsten deposition occurs through the chemical reduction of WF6 by a silicon substrate. The thickness of the tungsten film thus grown is limited by the transpo... View full abstract»

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  • Magnetic thin films in recording technology

    Publication Year: 1990, Page(s):884 - 902
    Cited by:  Papers (9)  |  Patents (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1659 KB)

    This paper is a review of recent progress in magnetic thin films for use in recording media and heads. Emphasis is on work that has been carried out at IBM. Topics covered include thin-film media for high-density recording, laminated soft-magnetic films for controlling domains and extending the frequency range of inductive heads, exchange-biasing of magnetoresistive sensors, and magnetic multilaye... View full abstract»

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  • Magnetic multilayer structures

    Publication Year: 1990, Page(s):903 - 915
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1206 KB)

    This is an overview of work at the IBM Almaden Research Center on magnetic multilayer structures comprising one, several, or many magnetic films sandwiched between nonmagnetic films. In recent years there has been increasing interest in such structures because of their novel and potentially useful properties. Recent examples of magnetic multilayer structures grown by molecular beam epitaxy (MBE) a... View full abstract»

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  • Lanthanide gallate perovskite-type substrates for epitaxial, high-Tc superconducting Ba2YCu3O7-δ films

    Publication Year: 1990, Page(s):916 - 926
    Cited by:  Papers (1)  |  Patents (67)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (943 KB)

    Previous studies had indicated promising use of lanthanide gallate perovskite-type substrates for the deposition of epitaxial, high-Tc superconducting Ba2YCu3O7-δ (BYCO) films. They were also found to have moderate dielectric constants (∼25 compared to ∼277 for SrTiO3). This study was undertaken to further explore the use ... View full abstract»

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  • Recent publications by IBM authors

    Publication Year: 1990, Page(s):927 - 939
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1146 KB)

    The information listed here is supplied by the Institute for Scientific Information and other outside sources. Reprints of the papers may be obtained by writing directly to the first author cited. Journals are listed alphabetically by title; papers are listed sequentially for each journal. View full abstract»

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  • Recent IBM patents

    Publication Year: 1990, Page(s):940 - 941
    IEEE is not the copyright holder of this material | PDF file iconPDF (152 KB)
    Freely Available from IEEE
  • Author index for papers Volume 34

    Publication Year: 1990, Page(s):942 - 946
    IEEE is not the copyright holder of this material | PDF file iconPDF (275 KB)
    Freely Available from IEEE
  • Subject index for papers in Volume 34

    Publication Year: 1990, Page(s):947 - 951
    IEEE is not the copyright holder of this material | PDF file iconPDF (382 KB)
    Freely Available from IEEE

Aims & Scope

The IBM Journal of Research and Development is a peer-reviewed technical journal, published bimonthly, which features the work of authors in the science, technology and engineering of information systems.

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Meet Our Editors

Editor-in-Chief
Clifford A. Pickover
IBM T. J. Watson Research Center