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IEE Proceedings I - Solid-State and Electron Devices

Issue 3 • June 1987

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Displaying Results 1 - 7 of 7
  • Increase in sustaining voltage of gate-turnoff thyristors by an innovative floating gate structure

    Publication Year: 1987, Page(s):77 - 80
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (532 KB)

    The turnoff capability of a gate-turnoff thyristor is described by a sustaining voltage Vs which is the maximum reapplied voltage during current interruption. An innovative floating gate structure in which one of the two gate electrodes formed on both sides of the cathode emitter is connected to the external gate terminal provides a significant increase in Vs of more than 800 V from the 600 V of a... View full abstract»

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  • Substrate bias compensation of negative slope conductance in self heated MOSFETs

    Publication Year: 1987, Page(s):81 - 84
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (398 KB)

    New techniques for the compensation of negative differential (slope) output conductance of self heated MOSFETs have been investigated. Mathematical criteria are derived for a cancellation of thermal droop of drain current. The theoretical advantages of substrate bias cancellation are tested in experiments. View full abstract»

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  • Optical sectioning in infra-red scanning microscopy

    Publication Year: 1987, Page(s):85 - 86
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (349 KB)

    We present confocal reflection infra-red images of semiconductor devices and show that the confocal microscope's unique optical sectioning property results in images of greater clarity and contrast when features are being examined through large thicknesses of semiconductor. We also show how polarisation effects may be exploited to give similar results. View full abstract»

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  • Optimisation of VDMOS power transistors for minimum on-state resistance

    Publication Year: 1987, Page(s):87 - 91
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (555 KB)

    A 2-dimensional numerical simulation program has been applied to the power VDMOS structure to determine design guidelines for minimum specific on-state resistance subject to a given breakdown voltage requirement. The entire cell has been modelled to take full account of contributions from the inversion and accumulation layers as well as the effect of cell spacing on the breakdown voltage. Optimise... View full abstract»

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  • Book review: Microcircuit Technology

    Publication Year: 1987
    IEEE is not the copyright holder of this material | PDF file iconPDF (153 KB)
    Freely Available from IEEE
  • Perturbational solutions of the boltzmann transport equation for n+ nn+ structures

    Publication Year: 1987
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (894 KB)

    A perturbational, moments-of-the-Boltzmann-equation approach (PMBE) is used to obtain the impedance Z and propagation constant k of n+nn+ diode structures in an analytical fashion. Evaluation of Z and k is relatively inexpensive so that hundreds of distinct boundary conditions (BC), corresponding to a single set of interior device parameters, may be studied. Based on such PMBE analytically obtaine... View full abstract»

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  • Simple technique to improve the computational efficiency of monte carlo carrier transport simulations in semiconductors

    Publication Year: 1987, Page(s):101 - 104
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (476 KB)

    A simple linear search technique is described which seeks to minimise the fraction of electron free-flights terminating in self-scattering events during Monte Carlo simulation of carrier transport in semiconductors. For a given simulation problem, this search technique reduces the required CPU time by at least a factor of four to six when compared with established techniques. View full abstract»

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