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IEE Proceedings I - Solid-State and Electron Devices

Issue 3 • June 1980

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Displaying Results 1 - 12 of 12
  • Required minimum value of barrier height in minority-carrier m.i.s. solar cells

    Publication Year: 1980, Page(s):105 - 108
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (331 KB)

    The saturation currents of minority-and majority-carrier m.i.s. solar cells have been compared to find the value of the barrier height ¿¿ms, where the dominating saturation current changes from a majority-carrier current to a minority-carrier current. For an interfacial oxide layer of 20 Å, the value of¿¿ms has been calculated to be in the range 750-800 mV, whereas for an oxide layer of 10 Å... View full abstract»

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  • Injection phase delay in high-power Baritt oscillators

    Publication Year: 1980, Page(s):109 - 110
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (272 KB)

    Large-signal injection phase delay in Baritt oscillators can be estimated from the measured d.c. and microwave characteristics of the device used, provided a constant transit time with bias current is assumed. This has been examined in the present work and a simple method has been described with a practical example. View full abstract»

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  • Theory of switching in p-n-insulator (tunnel)-metal devices: thick-tunnel oxides and indirect tunnel effects

    Publication Year: 1980, Page(s):111 - 118
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (816 KB)

    The four-layered m.i.s.s. device (metal-tunnel insulator-n-p semiconductor) displays a current-controlled negative resistance in its I/V characteristics. This switching mechanism is the result of a regenerative feedback interaction between the p-n junction and the metal-tunnel insulator-semiconductor parts of the device. The modes of operation of the m.i.s.s. can be classified into avalanche or pu... View full abstract»

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  • Inversion-controlled switching mechanism of m.i.s.s. devices

    Publication Year: 1980, Page(s):119 - 125
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (702 KB)

    Experiments are reported on the switching characteristics of m.i. Si (n) Si(p+) devices with a thin oxide insulating layer (I). The influence of temperature, light and carrier injection into the n-layer are analysed. Theoretical interpretation is based on a model which takes into account the multiplication mechanism which occurs at the Si-SiO2 interface when it is inverted. View full abstract»

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  • Electron and hole photocurrent effects on impatt oscillators

    Publication Year: 1980, Page(s):126 - 132
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (890 KB)

    Experimental and theoretical results are presented to show the difference between electron- and hole-initiated avalanches on the microwave properties on impatt oscillators under optical illumination. This difference, arising from unequal electron- and hole-ionisation rates, is demonstrated with X-band Si impatt structures suitable for microwave-optical interactions. A large signal impatt model is ... View full abstract»

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  • Microcomputer-aided interface-state analysis

    Publication Year: 1980, Page(s):133 - 136
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (483 KB)

    A semiautomatic measurement system has been developed for evaluating the electronic structure of the interface between an insulator and a semiconductor. The associated microcomputer possesses advanced software which leads to simple operation particularly when used in a real-time mode. An attractive feature of the technique is that admittance data are evaluated in the voltage domain using a modifie... View full abstract»

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  • p-type InP/Langmuir film m.i.s. diodes

    Publication Year: 1980, Page(s):137 - 139
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (404 KB)

    The paper reports for the first time the m.i.s. characteristics of p-type InP structures preparaed using a low temperature method. With organic films deposited using the langmuir-Blodgett technique, fairly conventional CV data have been obtained for both bulk single crystals and epitaxial layers, showing that at zero bias, the surface is depleted. Conductance peaks have been observed using weak il... View full abstract»

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  • Quasistatic and nonequilibrium phenomena in m.o.s. structures under the influence of a constant gate-current bias

    Publication Year: 1980, Page(s):140 - 146
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (585 KB)

    The quasistatic and nonequilibrium response of an m.o.s. system containing bulk traps under constant gate-current conditions is analysed. It is shown that a particular advantage of the method is that the total semiconductor capacitance can be extracted directly from the curves, thus easing the analysis of quasistatic results for obtaining interface state density. For a specific range of operating ... View full abstract»

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  • Charge Coupled Devices and their Applications

    Publication Year: 1980
    IEEE is not the copyright holder of this material | PDF file iconPDF (172 KB)
    Freely Available from IEEE
  • Crystal Growth Bibliography

    Publication Year: 1980
    IEEE is not the copyright holder of this material | PDF file iconPDF (171 KB)
    Freely Available from IEEE
  • Nondestructive Evaluation of Semiconductor Materials and Devices

    Publication Year: 1980, Page(s):147 - 148
    IEEE is not the copyright holder of this material | PDF file iconPDF (229 KB)
    Freely Available from IEEE
  • Erratum: Depletion-mode m.o.s.f.e.t. model including a field-dependent surface mobility

    Publication Year: 1980
    Cited by:  Papers (4)
    IEEE is not the copyright holder of this material | PDF file iconPDF (67 KB)
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