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IEEE Transactions on Nuclear Science

Issue 6 • Dec. 1985

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  • [Front cover]

    Publication Year: 1985, Page(s): c1
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  • IEEE Transactions on Nuclear Science

    Publication Year: 1985, Page(s): c2
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  • Table of contents

    Publication Year: 1985, Page(s):3881 - 3884
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  • Summary of 1985 IEEE Annual Conference on Nuclear and Space Radiation Effects

    Publication Year: 1985, Page(s):3885 - 3886
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  • 1985 Conference Committee

    Publication Year: 1985, Page(s): 3886
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  • Seen in Monterey

    Publication Year: 1985, Page(s):3887 - 3889
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  • IEEE Nuclear and Space Radiation Effects Conference Short Course

    Publication Year: 1985, Page(s):3890 - 3891
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  • Editorial Comments

    Publication Year: 1985, Page(s): 3892
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  • IEEE Nuclear and Plasma Sciences Committee Radiation Effects Committee Steering Group

    Publication Year: 1985, Page(s): 3892
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  • Reviewers for This Issue

    Publication Year: 1985, Page(s): 3893
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  • Outstanding Conference Paper Award 1985 Ieee Nuclear and Space Radiation Effects Conference

    Publication Year: 1985, Page(s):3894 - 3895
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  • Distinguished Poster Paper Award

    Publication Year: 1985, Page(s): 3896
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  • Nominees for 1985 Best Paper Awards

    Publication Year: 1985, Page(s): 3896
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  • In Memoriam

    Publication Year: 1985, Page(s): 3897
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  • The Time Dependence of Interface State Production

    Publication Year: 1985, Page(s):3899 - 3904
    Cited by:  Papers (20)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (802 KB)

    A model for the reaction kinetics of interface state generation is developed. The reaction kinetics lie between third and first order for high and low concentrations of radiolytic molecular hydrogen, respectively. The application of these equations to the treatments of post irradiation effects is discussed. View full abstract»

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  • Process Dependent Build-Up of Interface States in Irradiated N-Channel MOSFETs

    Publication Year: 1985, Page(s):3905 - 3910
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1173 KB)

    The build-up of fast-states (¿Dit) continues to occur in the Si/SiO2 interface region even after the irradiation has stopped. For the devices described in this paper, the process of conversion of trapped positive charges (¿Qot) into ¿Dit appears to be responsible for the build-up. The presence of ambient hydrogen is necessary for the conversion to occur in well annealed MOS devices without SiN-... View full abstract»

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  • Bias Annealing of Radiation and Bias Induced Positive Charges in N- and P-Type MOS Capacitors

    Publication Year: 1985, Page(s):3911 - 3915
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (711 KB)

    The radiation-induced positive charges trapped in an n-type MDS capacitor were observed to decrease with the number of C-V measurements. The positive gate bias applied on the capacitor was found to cause the decrease in the trapped charges. Its proposed mechanism was a recombination of the trapped positive charges with electrons injected from the Si substrate into the SiO2 layer due to the bias. View full abstract»

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  • Hole Removal in Thin-Gate MOSFETs by Tunneling

    Publication Year: 1985, Page(s):3916 - 3920
    Cited by:  Papers (69)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (936 KB)

    Fast time-resolved measurements of the response of thin-oxide MOSFETs show that radiation-induced holes are removed from the gate oxide by a tunneling process. A tunneling rate of 0.35 nm/decade from each interface is found for SiO2 at 77 K. Fast time-resolved measurements performed at room temperature are in qualitative agreement with low-temperature annealing data. Uncertainties in the room-temp... View full abstract»

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  • Activation Energies of Oxide Charge Recovery in SOS or SOI Structures after an Ionizing Pulse

    Publication Year: 1985, Page(s):3921 - 3928
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1469 KB)

    MOS transistors in either SOS technology with oxidation temperature varations or laser-recrystallized SOI have been exposed to ionizing pulse in order to derive activation energy of oxide charge recovery. It is found a direct dependence of annealing activation energy on oxidation or on highest temperature, and on electric field. In case of SOI, substrate oxide must also be considered. Models are d... View full abstract»

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  • Radiation-Induced Hole Trapping and Interface State Characteristics of Al-Gate and Poly-Si Gate MOS Capacitors

    Publication Year: 1985, Page(s):3929 - 3934
    Cited by:  Papers (12)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1059 KB)

    Using the techniques of thermally stimulated current and high-frequency C-V measurements, the device processing dependence of radiation-induced hole traps and interface states in MOS capacitors has been investigated. It was found that the fabrication of poly-Si gates caused all investigated gate oxides to resemble those grown by pyrogenic techniques. The role of postoxidation annealing (POA) in ho... View full abstract»

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  • Correlation of Hot-Carrier and Radiation Effects in MOS Transistors

    Publication Year: 1985, Page(s):3935 - 3939
    Cited by:  Papers (23)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (931 KB)

    The effects of processing variations on the hot-carrier susceptibility of radiation-hardened CMOS transistors have been examined. It has been determined that many process variations which enhance radiation hardness also reduce hot-carrier-induced device degradation. The interactions of radiation and hot-carrier effects are demonstrated not to be additive. View full abstract»

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  • Hole Transport and Trapping in Field Oxides

    Publication Year: 1985, Page(s):3940 - 3945
    Cited by:  Papers (61)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1075 KB)

    The electric field, temperature, and oxide thickness dependencies of the transport of radiation-generated holes through thick (> 100 nm) SiO2 layers was measured using fast capacitance-voltage techniques. The transport is radically slowed with respect to that in thinner oxides under similar conditions and is well described by the continuous time random walk model. Significant hole trapping in the ... View full abstract»

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  • Total Dose Indujced Hole Trapping and Interface State Generation in Bipolar Recessed Field Oxides

    Publication Year: 1985, Page(s):3946 - 3952
    Cited by:  Papers (27)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1372 KB)

    Ionizing radiation induced trapped hole density, Not, and interface state density, Nit, are investigated in bipolar recessed field oxides using parasitic nMOS transistors. Most of the results agree with previous studies made with capacitors on generic thick field oxides. New results include the effects of PN junction fringing fields on inversion voltage shift. Implications are made for total dose ... View full abstract»

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  • Optimizing and Controlling the Radiation Hardness of a Si-Gate CMOS Process

    Publication Year: 1985, Page(s):3953 - 3960
    Cited by:  Papers (52)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1492 KB)

    A quick-turnaround technique is presented for optimizing the radiation hardness of parts produced by a Si-gate CMOS process. The technique involves (1) fabricating MOS capacitors on control wafers that can be "pulled" at different stages during the fabrication process, and (2) defining "hardness" in terms of the amount of radiation-induced charge. We demonstrate the use of this technique in monito... View full abstract»

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  • Neutron Irradiation as a Means of Reducing the Incidence of Radiation Induced Breakdown in a Radiation Hard Power MOSFET

    Publication Year: 1985, Page(s):3961 - 3964
    Cited by:  Papers (2)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (514 KB)

    The problem of transient gamma induced "second breakdown" in a specially developed radiation hard power MOSFET is discussed, and results of experiments in which neutron irradiation was used to control minority carrier lifetime are presented. The technique is only partially successful at reducing susceptibility to second breakdown. View full abstract»

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Aims & Scope

IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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Meet Our Editors

Editor-in-Chief
Paul Dressendorfer
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