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IEEE Transactions on Nuclear Science

Issue 6 • Dec. 1969

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Displaying Results 1 - 25 of 54
  • [Front cover]

    Publication Year: 1969, Page(s): c1
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  • IEEE Nuclear Science Group

    Publication Year: 1969, Page(s): c2
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  • Table of contents

    Publication Year: 1969, Page(s):1 - 4
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  • The Nucleus

    Publication Year: 1969, Page(s): 5
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  • Summary of 1969 IEEE Annual Conference on Nuclear and Space Radiation Effects

    Publication Year: 1969, Page(s): 6
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  • Scenes at 1969 IEEE Radiation Effects Conference

    Publication Year: 1969, Page(s): 7
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  • IEEE Nuclear Science Group Radiation Effects Committee

    Publication Year: 1969, Page(s): 8
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  • Reviewers for Conference Issue - 1969

    Publication Year: 1969, Page(s): 9
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  • 1969 IEEE Conference Outstanding Paper Award

    Publication Year: 1969, Page(s):10 - 11
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  • A Microscopic View of Radiation Damage in Semiconductors Using EPR as a Probe Invited Paper

    Publication Year: 1969, Page(s):13 - 18
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (820 KB)

    This is the text of a tutorial talk on the use of electron paramagnetic resonance (EPR) as a "microscopic" tool in the study of radiation-produced defects in semiconductors. The basic concepts of EPR and its general applicability to point defects in semiconductors are outlined. As an illustrative example, the study of a p-type (aluminum doped) silicon sample is described from 20.4°K irradiation w... View full abstract»

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  • Impurity Dependence of Defect Introduction and Annealing in Electron Irradiated n-Type Germanium

    Publication Year: 1969, Page(s):19 - 23
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (761 KB)

    Electron irradiation experiments on Si and Ge have indicated the creation of highly mobile interstitial atoms that in turn displace substitutional chemical impurity atoms (S) from the lattice; hence, the primary products of irradiation may be lattice vacancies (V) and interstitial chemical impurities (I). Subsequent annealing may then involve some type of interaction between (V) and (I). The relat... View full abstract»

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  • Interstitial Defects in p-Type Silicon

    Publication Year: 1969, Page(s):24 - 27
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (537 KB)

    Two defects introduced in boron- and aluminum-doped silicon by 1.5-MeV electron irradiation have been studied by means of infrared photoconductivity. The defects have been identified as being dopant atoms in interstital positions. Stress-induced dichroism measurements have allowed the determination of the defects' symmetry which is C3v. View full abstract»

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  • Thermal and Injection Annealing of Neutron-Irradiated p-Type Silicon between 76°K and 300°K

    Publication Year: 1969, Page(s):28 - 32
    Cited by:  Papers (16)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (833 KB)

    Measurements of minority carrier lifetime damage constant and divacancy growth following neutron irradiation at 76°K have been used to characterize further the annealing of neutron damage in silicon below 300°K. It has been shown that electron injection into p-type silicon at 76°K causes recovery of the neutron induced defect clusters with the simultaneous appearance of divacancies. Comparison ... View full abstract»

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  • Annealing Studies of Damage Introduced by High Energy Ion Implantations of Silicon

    Publication Year: 1969, Page(s):33 - 36
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1592 KB)

    Ion implantation of dopant impurities into semiconductors offers numerous potential advantages. However, because of the limited knowledge presently available on the annealing of lattice damage, the implantation profile and the electrical characteristics of implanted layers, a considerable amount of investigation is required before this doping technique can be put to practical use. Experimentally o... View full abstract»

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  • Observation of Crystal Lattice Planes in Neutron and Ion Bombarded Ge Invited Paper

    Publication Year: 1969, Page(s):37 - 42
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2003 KB)

    In the present work a review of the acheivements of the Gossick and Crawford model of disordered regions in semiconductors is given, together with a transmission electron microscope investigation of the structural characteristics of the disordered regions themselves. Both diffraction contrast and phase contrast electron microscope images have been used to examine disordered regions observed in Ge ... View full abstract»

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  • Neutron Fluence and Electric Field Strength Dependencies of the Rate of Volume Damage Introduction in Silicon P-N Junctions

    Publication Year: 1969, Page(s):43 - 52
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1318 KB)

    The anamolous behavior of neutron-induced defect clusters in the high field space-charge region of silicon p-n junctions is investigated. The space-charge region recombination current variation with neutron fluence and the junction electric field strength present during irradiation is examined and an electric field strength dependence for the defect clusters is found to exist. The space-charge reg... View full abstract»

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  • Minority Carrier Recombination in Neutron Irradiated Silicon

    Publication Year: 1969, Page(s):53 - 62
    Cited by:  Papers (61)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1720 KB)

    Measurements are reported which provide extensive data on the resistivity, temperature, and injection level dependences of the minority carrier lifetime in neutron irradiated p- and n-type silicon. The lifetime damage constants are observed to be quite dependent on the injected minority carrier density, in both conductivity types, over the temperature range from 76°K to 300°K. The low injection ... View full abstract»

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  • Impurity Effects on Transistor Behavior at Low Temperature

    Publication Year: 1969, Page(s):63 - 68
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (804 KB)

    Unusual low temperature behavior has been observed in NPN silicon transistors when gallium is employed as the base dopant. The current gain exhibits a pronounced "hump" near 76°K in these devices, which enables them to be studied and utilized at this low temperature. Near the hump temperature, the tolerance of the gallium doped devices to fast neutrons is observed to be approximately a factor of ... View full abstract»

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  • Effect of 14 MeV Neutrons on Space-Charge-Limited Current of Electrons in High Purity Silicon

    Publication Year: 1969, Page(s):69 - 80
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1751 KB)

    Alloyed and symmetrical n+¿n+ devices made of nominally 75k¿cm ¿-type Si are analyzed before and after irradiation with 14MeV neutrons at room temperature and doses of 1.2×1011, 5.5×1011 and 4.0×1012n/cm2. Immediately after the application of a large turn-on voltage step at t ¿ O, the flow of electrons through these devices is by pure, trap free, space-charge-limited current (sclc). From an... View full abstract»

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  • Optimization of the Neutron Radiation Tolerance of Junction Field Effect Transistors

    Publication Year: 1969, Page(s):81 - 86
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (725 KB)

    The fast neutron irradiation induced degradation of junction field effect transistors has been studied in detail. A comparison of p-channel to n-channel devices has confirmed reported differences in hole and electron removal rates. The predicted increase of hardness with increasing channel dopant concentration is experimentally demonstrated, although channel dopant grading makes very heavily doped... View full abstract»

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  • Radiation Effects on Junction Field Effect Transistors

    Publication Year: 1969, Page(s):87 - 95
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1307 KB)

    Experimentally determined permanent and transient effects of radiation on the electrical characteristics of junction field effect transistors (JFET's) are presented for JFET's exposed to energetic neutron doses up to 1016 neutrons/cm2 (E > 10 Kev) and ionizing radiation up to 8×109 rad/sec. Results of extensive transient radiation experiments using the AFCRL Linac are presented for various combin... View full abstract»

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  • Radiation-Induced Integrated Circuit Latchup

    Publication Year: 1969, Page(s):96 - 103
    Cited by:  Papers (26)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1663 KB)

    This paper discusses integrated circuit (IC) structures and associated physical mechanisms which are responsible for the phenomenon of radiation-induced latchup. Laboratory measurements on selected IC's haveverifiedthatthestructures described will support latchup. These measurements are briefly discussed. An important result of the laboratory measurements has been to establish that electrical test... View full abstract»

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  • An Analysis of Ionizing Radiation Effects in Four-Layer Semiconductor Devices

    Publication Year: 1969, Page(s):104 - 110
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1115 KB)

    The switching of a four-layer semiconductor device in an ionizing radiation environment is calculated by solving the charge transport equations to determine the motion of the electron and hole distributions and the changes in the electric field distribution throughout a one-dimensional device as a function of time. A discussion of the characteristic device turn-on as a function of the ionizing rad... View full abstract»

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  • Competition between Base and Substrate Junctions for Free Carriers in Microcircuit Collector Regions

    Publication Year: 1969, Page(s):111 - 113
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (459 KB)

    First Page of the Article
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  • Transient Radiation Response of Complementary-Symmetry MOS Integrated Circuits

    Publication Year: 1969, Page(s):114 - 119
    Cited by:  Papers (21)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3122 KB)

    Complementary-symmetry MOS (CMOS) integrated circuits were subjected to a sub-microsecond burst of high intensity ionizing radiation using 10-MeV electrons from a LINAC. The results show that, at peak doserate values of less than 8 × 108 rads (Si)/s, the transient change in output voltage of a CMOS inverter is small and can be attributed simply to the net junction photocurrent flowing at the outp... View full abstract»

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IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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