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IEEE Transactions on Nuclear Science

Issue 1 • Feb. 1966

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Displaying Results 1 - 25 of 116
  • [Front cover]

    Publication Year: 1966, Page(s): c1
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    Freely Available from IEEE
  • IEEE Nuclear Science Group

    Publication Year: 1966, Page(s): c2
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    Freely Available from IEEE
  • Table of contents

    Publication Year: 1966, Page(s):iii - vii
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  • The Nucleus

    Publication Year: 1966, Page(s):i - 1
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    Freely Available from IEEE
  • Instrumentation and Nuclear Power

    Publication Year: 1966, Page(s):2 - 5
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  • Radiological Prediction and Monitoring of Tests at the Nuclear Rocket Development Station

    Publication Year: 1966, Page(s):6 - 13
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    The procedure and formula used in the radiological analysis of reactor testing at the Nuclear Rocket Development Station are described. Monitoring methods are discussed and comparison is made between measured dose levels and guide values. View full abstract»

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  • Telesensors, Teleoperators, and Telecontrols for Remote Operations

    Publication Year: 1966, Page(s):14 - 21
    Cited by:  Papers (1)
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    Telesensors, teleoperators, and telecontrols are words defining sensory systems, electromechanical operators, and controls systems operated by man from a distance. Because of the increasing demand for equipment that can give man the ability to operate in hostile environments, operating from a distance is now a major need. Remotely operated systems can provide this capability if they satisfy the fo... View full abstract»

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  • Junction Counters Produced by Irradiation of Silicon with Dopant Ions

    Publication Year: 1966, Page(s):22 - 29
    Cited by:  Papers (14)
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    Silicon P-N junctions fabricated using kilovolt energy phosphorus and boron ions are described. The dopant ions are implanted through a previously applied layer of sputtered quartz, resulting in a conductive silicon layer of 0.1 to 1.0¿ thickness beneath the passivating quartz. Advantages of counters constructed in this manner are resistance to abrasion and ambient vapors similar to that of diffu... View full abstract»

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  • The Characteristics of Very Shallow Silicon Junctions

    Publication Year: 1966, Page(s):30 - 35
    Cited by:  Papers (2)
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    Previous investigations have shown that the characteristics of shallow diffused junctions frequently exhibit important departures from those predicted by the ordinary solutions of the diffusion equation. These characteristics depend on the details of diffusion processes and play an important, but not completely understood, role in establishing detector quality. For example, the resolution loss ass... View full abstract»

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  • Recent Results Obtained with High Field, Internally Amplifying Semiconductor Radiation Detectors

    Publication Year: 1966, Page(s):36 - 42
    Cited by:  Papers (30)  |  Patents (1)
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    Characterization of the gallium diffused junctions found useful as amplifying radiation detectors indicate a rather surprising window-junction depth relationship. The window, at only the self bias of the junction, has been measured to be a micron or so although the junction depth is ~50 microns. This is a result of the unusual diffusion process used - diffusion to 75 microns with subsequent remova... View full abstract»

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  • Response of Solid-State Detectors to Fission Fragments

    Publication Year: 1966, Page(s):43 - 47
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (787 KB)

    Pulse amplitude spectra for fission fragments from the spontaneous fission of Cf252 have been studied for more than 50 silicon surface-barrier detectors. Silicon resistivities ranged from 100 to 2000 Ohm-cm; spectra were obtained for several bias voltages for each detector. A search for correlations among shape parameters associated with Cf252 fragment pulse-amplitude spectra was carried out. Such... View full abstract»

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  • Temperature Dependence of Average Energy Per Pair in Semiconductor Detectors

    Publication Year: 1966, Page(s):48 - 52
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    An accurate measurement of the average energy lost by charged particles per hole-electron pair produced in semiconductor detectors as a function of temperature is desirable in view of the recently noted response of detectors at low temperatures. A simple model for the value of ¿, the average energy per hole-electron pair, was proposed by Shockley in 1960. This model has been extended in the prese... View full abstract»

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  • Operating Characteristics of Lithium Drift Detectors

    Publication Year: 1966, Page(s):53 - 61
    Cited by:  Papers (1)
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    A study of the operating characteristics of diffused window lithium drift silicon detector has revealed that the level of compensation is independent of depth. The compensation corresponds to a net impurity concentration of 5 × 1010 impurities per cubic centimeter and is approximately three order of magnitude poorer than that set by current flow through a diode. Using time stability studies it is... View full abstract»

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  • Large-Volume Coaxial Germanium Gamma-Ray Spectrometers

    Publication Year: 1966, Page(s):62 - 71
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3746 KB)

    Germanium lithium-drift p-i-n diodes for high resolution 7-ray spectroscopy have been made with sensitive volumes in the range 16 to 54 cm3 (1 to 3.3 in. 3) using the coaxial method of drift. Details of the construction, mounting and preparation as spectrometers are given. The shape of the undrifted p-type core has been determined by scanning with a collimated 7-ray beam and by copper plating the ... View full abstract»

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  • Timing Characteristics of Large Coaxial Ge(Li) Detectors for Coincidence Experiments

    Publication Year: 1966, Page(s):72 - 77
    Cited by:  Papers (20)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1062 KB)

    The high efficiencies of large volume 'coaxial' Ge(Li) detectors make them attractive for coincidence experiments. However the electric field in this configuration is not uniform and hence the charge collection times vary widely as a function of position in the detector. The resultant variations in output pulse shape limit coincidence resolving times. In our studies one 511 keV annihilation quantu... View full abstract»

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  • Surface Potential Measurements of Lithium Drifted Germanium Diodes

    Publication Year: 1966, Page(s):78 - 83
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    Anomalous behaviour of the capacitance and gamma detection performance of some wide depletion layer lithium drifted germanium diodes has recently been reported1. The observed effects were explained qualitatively in terms of the type of ions absorbed on the surface of the intrinsic layer2 . Surface potential measurements made with a vibrating condenser probe are presented, which support the theoret... View full abstract»

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  • Ambient Storage Effects and Mounting Problems of Very Large Volume Ge LID Detectors

    Publication Year: 1966, Page(s):84 - 92
    Cited by:  Papers (3)
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    Ambient Storage Effects and Mounting Problems of Very Large Volume Ge LID Detectors, Guy Armantrout - In order to better understand the problems involved in mounting and handling a large volume Ge LID detector, a study was undertaken of the surface-setting procedure before mounting and the effect of diode storage for varying periods of time at the ambient temperature. The diode surface potential, ... View full abstract»

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  • Geometric Control of Surface Leakage Current and Noise in Lithium Drifted Silicon Radiation Detectors

    Publication Year: 1966, Page(s):93 - 103
    Cited by:  Papers (21)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1791 KB)

    Lithium drifted silicon radiation detectors exposed to normal ambient have been shown to have a surface n-type layer which extends from the "n" side over to the " p" side of the device. In this paper a continuation of the study of surface problems is presented, and a successful method for the control of leakage current and noise due to surface breakdown is shown. Noise measurements carried out on ... View full abstract»

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  • The Semiconductor Fast-Neutron Dosimeter-Its Characteristics and Applications

    Publication Year: 1966, Page(s):104 - 110
    Cited by:  Papers (4)
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    The characteristics and most recent results with a semiconductor fast-neutron dosimeter are dTscribed. This device is a wide-base silicon n+ - p - p+ junction whose forward resistance is controlled by the density of injected charge carriers in the base region. The injected carrier density profile is a function of the carrier diffusion length. Upon neutron bombardment, the diffusion length is decre... View full abstract»

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  • Response function and sensitivity of double-diffused silicon detectors in high γ-dose rate fields

    Publication Year: 1966, Page(s):111 - 119
    Cited by:  Papers (4)
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    Response Function and Sensitivity of Double-Diffused Silicon Detectors in High γ-Dose Rate Fields, R. W. Kuckuck, R. Bernescut, M. R. Zatzick and C. P. Jupiter - A number of double-diffused (PIN) silicon detectors were exposed to peak γ-dose rates of 1019 γ-MeV/cm2-sec generated by a flash x-ray machine. Detailed examination of the rate and linearity ... View full abstract»

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  • Public Safety Aspects of Nuclear Power Plant Licensing

    Publication Year: 1966, Page(s):120 - 125
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    Various aspects of the siting, design, construction and operation of nuclear power plants to which the Atomic Energy Commission gives attention in its licensing activities are discussed, together with the reasons why they are considered important to public safety. This includes the measures taken to assure the integrity of the nuclear fuel and primary coolant system under all operating conditions;... View full abstract»

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  • A Review of Results of Reactor Safety Research

    Publication Year: 1966, Page(s):126 - 132
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  • Safety Aspects of Nuclear Power Plants-A Utility Consultant's View

    Publication Year: 1966, Page(s):133 - 137
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    Projections of installed nuclear power plant capacity are provided as a background forthe scope of activities with which utilities will be concerned for safety purposes. A description of the types of safety analyses is presented as well as the assumptions basic to such analyses. Finally, the "layers of conservatism" in present methods of analysis are illustrated and suggestions made toattach quant... View full abstract»

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  • Safety and the Nuclear Plant Engineer

    Publication Year: 1966, Page(s):138 - 143
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  • A Computer-Based Multiparameter Analyzer

    Publication Year: 1966, Page(s):144 - 150
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1375 KB)

    A system has been constructed and used for on-line acquisition of data at the Iowa State Synchrotron Laboratory. The principal components include eight Victoreen analog to digital converters (ADC) and a fast general purpose digital computer (SDS 910) along with the necessary interface circuitry to couple to the digitized outputs of scalers, clocks, etc. Although quite flexible in application, the ... View full abstract»

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IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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