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IEEE Transactions on Electron Devices

Issue 10 • Oct. 1982

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Displaying Results 1 - 25 of 111
  • [Front cover and table of contents]

    Publication Year: 1982, Page(s): c1
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    Freely Available from IEEE
  • Changes in the editorial board

    Publication Year: 1982, Page(s): 1501
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (208 KB)

    First Page of the Article
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  • GaAs digital IC for FM demodulator

    Publication Year: 1982, Page(s):1502 - 1507
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (904 KB)

    A middle-scale GaAs digital IC for a pulse-counting FM demodulator has been designed and fabricated for use in microwave communication systems. The IC is constructed with the normally-on (depletion) MESFET logic with epitaxial active layers. It exhibits a high-speed pulse train with a rise time of 150 ps and with an output voltage of 2.3 V into a 300-Ω load. Output pulsewidth can be altered b... View full abstract»

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  • MOSFET's on Au-diffused high-resistivity Si substrates

    Publication Year: 1982, Page(s):1507 - 1510
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (440 KB)

    Si MOSFET's on Au-diffused high-resistivity substrates were fabricated and their electrical properties were investigated. At 80 K, the current leakage between the source and drain of both n- and p-channel devices decreased below 10-10A, and the devices exhibited normally-off behaviors. Au concentrations ( ... View full abstract»

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  • A new method for experimental determination of the series resistance of a solar cell

    Publication Year: 1982, Page(s):1511 - 1513
    Cited by:  Papers (14)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (272 KB)

    A new method for determining the series resistance of a solar cell from illuminated I-V measurements is presented. The method, based on the computation of the area A , under the I-V curve, evaluates Rsusing the equation ... View full abstract»

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  • A p-i-n heterojunction model for the thin-film CuInSe2/CdS solar cell

    Publication Year: 1982, Page(s):1513 - 1515
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (288 KB)

    By treating the high-resistivity CdS and CuInSe2layers in high efficiency cells as insulating, a simple p-i-n model results that predicts the behavior seen in these cells. The relatively low open-circuit voltage and the diode factor are both directly related to the width of the insulating CdS layer. Substantial improvements in both Vocand fill factor can be expected if the wi... View full abstract»

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  • Subthreshold current of dual-gate MOSFET's

    Publication Year: 1982, Page(s):1516 - 1522
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (736 KB)

    The subthreshold conduction in dual-gate MOS transistors is investigated. The subthreshold current is calculated both in the long-channel case and the short-channel case by means of simple models. Good agreement is found between theory and experimental results obtained through measurements on overlapping-gate n-channel devices. As an application of the subthreshold current analysis, the low-freque... View full abstract»

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  • Gate formation in GaAs MESFET's using ion-beam etching technology

    Publication Year: 1982, Page(s):1522 - 1529
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1176 KB)

    The use of ion-beam etching for the controllable formation of very thin active channel layers in GaAs MESFET's is investigated and compared with chemical and plasma etching techniques. The Schottky gate diodes associated with ion-beam etched surfaces show significant surface damage, a substantial part of which can be removed by annealing. Typical annealed diodes exhibit a barrier height of 0.53 eV... View full abstract»

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  • Two-dimensional model of a thyristor turn-on channel

    Publication Year: 1982, Page(s):1529 - 1535
    Cited by:  Papers (3)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (744 KB)

    The goal of this contribution is to give some insight into the carrier and the current distribution at turn-on of a high-voltage thyristor in both axial and lateral dimensions. By means of a quasi-static two-dimensional theoretical model, the influence of the mobile charge on the potential distribution at the verge of turn-on is calculated. The result shows a bulging out of the space-charge layer ... View full abstract»

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  • A CMOS/SOS gate array with a new customization technique of cutting

    Publication Year: 1982, Page(s):1535 - 1541
    Cited by:  Papers (1)  |  Patents (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1472 KB)

    A 770-gate single-level metallized Si-gate CMOS/SOS gate array has been fabricated using a new customization technique: cutting pre-defined n+epitaxial silicon lines. Simple process and quick turnaround time are both realized. Total fabrication steps are reduced to 53 percent of those of the double-level metallized CMOS/bulk gate array because of a simplified CMOS/SOS process and only t... View full abstract»

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  • TiW Silicide gate self-alignment technology for ultra-high-speed GaAs MESFET LSI/VLSI's

    Publication Year: 1982, Page(s):1541 - 1547
    Cited by:  Papers (15)  |  Patents (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1016 KB)

    It has been found that TiW silicide film forms Schottky contacts on GaAs which are extremely stable even at temperatures of up to 850°C. Using this silicide for gate material, a novel self-alignment technique for GaAs MESFET's has been developed. A minimum propagation delay of 50 ps with 1.5-µ gate logic and successful fabrication of 1-kbit fixed address GaAs static memory cell arrays wh... View full abstract»

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  • Gate-drain avalanche breakdown in GaAs power MESFET's

    Publication Year: 1982, Page(s):1548 - 1552
    Cited by:  Papers (22)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (592 KB)

    The voltage breakdown behavior of a number of different MESFET structures has been investigated using a two-dimensional numerical model. The site of the avalanche is found to be under the drain edge of the gate in recessed devices under all bias conditions, but moves towards the drain contact in planar structures when the channel is not pinched off. The dependence of the breakdown voltage on a var... View full abstract»

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  • Turn-on phenomena in optically and electrically fired thyristors

    Publication Year: 1982, Page(s):1552 - 1560
    Cited by:  Papers (3)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (856 KB)

    An analytical solution of the time-dependent transport equation including surface recombination and optical injection for a diffused thyristor base is presented. By means of the classical two-transistor model, the turn-on transient may be predicted. Apart from the influence of technological parameters like base width, doping profile, and diffusion length, the effect of optical versus electrical in... View full abstract»

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  • High-voltage junction-gate field-effect transistor with recessed gates

    Publication Year: 1982, Page(s):1560 - 1570
    Cited by:  Papers (5)  |  Patents (15)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1720 KB)

    A new recessed-gate structure for vertical-channel junction field-effect transistors (JFET's) is described together with a self-aligned gate-source process developed to fabricate these devices. Using this technology, devices with groove depths ranging from 8 to 18 µm have been fabricated. The characteristics of these devices is described as a function of the groove depth. It has been found th... View full abstract»

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  • Effect of self-sharpening in low-velocity electron-beam scanning

    Publication Year: 1982, Page(s):1570 - 1579
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1072 KB)

    In order to clarify the self-sharpening effect which occurs in widely used camera tubes whose operation is based on the low-velocity-beam landing principle, the author has established a two-dimensional and nonlinear analysis. The details of the self-sharpening effect were investigated by developing a calculation program. The fundamental dependence of resolution capability on the following factors ... View full abstract»

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  • Breakover phenomena in field-controlled thyristors

    Publication Year: 1982, Page(s):1579 - 1587
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1032 KB)

    The occurrence of breakover in the forward-blocking anode current-voltage characteristics of field-controlled thyristors is analyzed. It is demonstrated that this breakover occurs due to gate current flow which causes a debiasing of the gate potential in the presence of any series gate resistance. Based upon this mechanism, analytical expressions have been derived which describe the anode current-... View full abstract»

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  • Barrier lowering in short-channel CCD's

    Publication Year: 1982, Page(s):1588 - 1593
    Cited by:  Papers (2)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (632 KB)

    In a two-phase overlapping CCD structure, the potential barrier height in the gap between the two storage gates decreases as the gap length is reduced due to fringing field effects. The barrier lowering limits the charge handling capacity in short-channel CCD's. A two-dimensional model is developed to calculate the barrier height for the various gap lengths. A simple measurement technique is devel... View full abstract»

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  • A comparative study of CMOS processes for VLSI applications

    Publication Year: 1982, Page(s):1593 - 1598
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (720 KB)

    A comparative study of simulated circuit performance has been made in order to determine the optimum process parameters for p-well CMOS with feature sizes of between 1 and 2 µm. it has been found that for the process considered, best speed, Power, and packing density are achieved with a substrate concentration of between 3 × 1015and 1016cm-3and an operati... View full abstract»

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  • Phonon-assisted carrier transport across a grain boundary

    Publication Year: 1982, Page(s):1598 - 1603
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (648 KB)

    A general theory of phonon-assisted transition of majority carriers across a grain boundary (GB) is formulated with the GB angle as a variable. It is found that the bulk relaxation time in the crystalline region and the transition time at the GB are the important parameters that determine the transmission coefficient of carriers across the GB. Using the proposed model, an n-type polycrystalline si... View full abstract»

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  • Analysis and capacitive measurement of the built-in-field parameter in highly doped emitters

    Publication Year: 1982, Page(s):1604 - 1610
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (624 KB)

    An elementary theory of a strongly asymmetric n+-n-p junction, assuming an exponential tail of the donor concentration profile in the depletion layer, is presented and supported by numerical computations. The drastic effect of the built-in field upon the minority carrier flow is discussed. A detailed expression of the static capacitance is then derived and shown to lead to an improved m... View full abstract»

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  • The reliability of silicon avalanche photodiodes for use in optical-fiber transmission systems

    Publication Year: 1982, Page(s):1611 - 1616
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (712 KB)

    Thermal overstress tests on silicon avalanche photodiodes (APD's) from two manufacturers have shown that APD's, despite their complexity, can have adequate reliability for use in optical-fiber transmission systems in telecommunications networks. However, two failure mechanisms were observed on the APD's from one manufacturer, namely increased surface leakage currents and localized premature breakd... View full abstract»

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  • Transient analysis of two semiconductor devices under circuit-loaded operation conditions

    Publication Year: 1982, Page(s):1617 - 1621
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (424 KB)

    A new method of numerical analysis for semiconductor devices is described. The analysis is carried out by solving a set of fundamental equations which govern the device characteristics and the circuit equation which indicates the circuit condition, simultaneously. Here, instead of Poisson's equation used as one of the fundamental equations in most reported analyses, a "current equation" is used, w... View full abstract»

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  • On-chip capacitance measurement circuits in VSLI structures

    Publication Year: 1982, Page(s):1622 - 1626
    Cited by:  Papers (13)  |  Patents (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (656 KB)

    A precise capacitance measurement technique is described. This technique is based on a principle of capacitively divided ac voltage measurement. Details of the measurement procedure and test pattern configuration is also discussed. Utilizing the technique, precise capacitance measurements were carried out, which were practically difficult with direct measurements, and size effects of the small geo... View full abstract»

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  • Thin film ZnS:Mn AC-electroluminescent device with a Ge layer

    Publication Year: 1982, Page(s):1626 - 1630
    Cited by:  Papers (2)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (736 KB)

    A new thin film electroluminescent device (indium tin oxide ITO-Y2O3- (ZnS:Mn)- Ge-Y2O3- Al) (type II) has been prepared, and is compared to the conventional structure (ITO- Y2O3- (ZnS:Mn) - Y2O3- Al) (type I). The optically active conduction charge is measured for both types in order to ascertain the effect of... View full abstract»

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  • Hot-electron limited operating voltages for 0.8-µm MOSFET's

    Publication Year: 1982, Page(s):1630 - 1632
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (384 KB)

    The maximum allowable operating voltage limited by hot-electrons for 0.8-µm MOSFET's, VGS= VDS, is determined to be 5.5 V at room temperature with VSUB= -2 V, as a result of long-term stress aging. Slow and fast threshold-voltage shifts are observed depending on stress conditions, i.e., the amount of hot-electrons injected into the gate SiO2. Genera... View full abstract»

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Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it