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IEEE Transactions on Electron Devices

Issue 9 • Sept. 1970

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Displaying Results 1 - 25 of 34
  • [Front cover and table of contents]

    Publication Year: 1970, Page(s): c1
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    Freely Available from IEEE
  • Editorial

    Publication Year: 1970, Page(s):645 - 646
    Cited by:  Papers (2)
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  • Effect of carrier lifetime on the forward characteristics of high-power devices

    Publication Year: 1970, Page(s):647 - 652
    Cited by:  Papers (21)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (576 KB)

    The influence of carrier lifetime on the characteristics of high-power devices has been examined from the standpoint of forward voltage drop at a given current, using existing theories of the p+ln+diode and allowing for carrier-carrier scattering effects. It is found that in the absence of recombination current in the heavily doped end regions, there exists an optimum base li... View full abstract»

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  • Correlations between reverse recovery time and lifetime of p-n junction driven by a current ramp

    Publication Year: 1970, Page(s):652 - 657
    Cited by:  Papers (26)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (504 KB)

    When a p-n junction is switched from the forward to the reverse direction by a current ramp, the reverse recovery time trris found 1) either to be equal to the base lifetime τ if the ramp rate ... View full abstract»

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  • The design of high-voltage high-power silicon junction rectifiers

    Publication Year: 1970, Page(s):657 - 660
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (424 KB)

    A set of curves is presented. These curves can be easily used to obtain the tradeoff relations between the reverse and the forward voltages of high-voltage p-i-n rectifiers. By using the lifetime as a parameter, those curves can also be used to achieve compromises between the forward voltage and the recovery time. View full abstract»

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  • High current-density beta diminution

    Publication Year: 1970, Page(s):661 - 666
    Cited by:  Papers (12)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (632 KB)

    This paper discusses methods for discriminating among various possible current-gain falloff mechanisms at high current densities. It is shown that although various mechanisms can predominate, well designed silicon transistors are usually limited by emitter efficiency. This is demonstrated experimentally for a variety of structures and values are given for the emitter saturation current density. De... View full abstract»

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  • A high-voltage, high-temperature reverse conducting thyristor

    Publication Year: 1970, Page(s):667 - 672
    Cited by:  Papers (5)  |  Patents (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (624 KB)

    This paper describes the structure and electrical characteristics of a silicon p-n-p-n inverter switch which has been fabricated to demonstrate the feasibility of obtaining both high-voltage and high-temperature capability in the same device while still maintaining reasonable dynamic properties. It was realized that in most inverter systems, feedback rectifiers are required, and thus the reverse b... View full abstract»

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  • Spreading velocity of the active area boundary in a thyristor

    Publication Year: 1970, Page(s):672 - 680
    Cited by:  Papers (39)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (976 KB)

    The modeling, measurement, and magnitude of the plasma-spreading velocity in a modern thyristor structure is discussed. A simple model based on lateral fields present in the p-base of the thyristor is derived. This model is compared with a diffusion model by examining the validity of their predictions. Data on the effects of variations in radial position, current density, temperature, base widths,... View full abstract»

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  • Plasma spread in high-power thyristors under dynamic and static conditions

    Publication Year: 1970, Page(s):680 - 687
    Cited by:  Papers (22)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (736 KB)

    The plasma spread properties of various thyristors were studied utilizing an infrared viewing technique. The plasma velocity occurring prior to equilibrium, and plasma spread conditions at equilibrium were determined. Velocity versus current density diagrams were generated for low-frequency, high-voltage and high-frequency, low-voltage devices. Effect of the initial turned-on line on plasma spread... View full abstract»

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  • Geometry of thyristor cathode shunts

    Publication Year: 1970, Page(s):687 - 690
    Cited by:  Papers (2)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (352 KB)

    In the all-diffused thyristor, the shunt pattern can easily be introduced by photo masking or silk screen techniques. It is known that the emitter shunts of various designs affected the rate of rise of forward blocking voltage, the forward I-V characteristics, the loop effect, the turn-on time, the dynamic forward voltage drop, and the reverse recovery time. This paper will show their relations to... View full abstract»

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  • The current pulse ratings of thyristors

    Publication Year: 1970, Page(s):690 - 693
    Cited by:  Papers (14)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (384 KB)

    This paper describes how the current pulse ratings of thyristors during turn-on spreading can be obtained from the maximum allowable junction temperature based on time-to-failure using a combination of analytical and experimental methods. The instantaneous junction temperature rise of a thyristor is analyzed with the aid of a digital computer. In the calculation of temperature rise, the transient ... View full abstract»

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  • Characteristics of a high-current, high-voltage Shockley diode

    Publication Year: 1970, Page(s):694 - 705
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1272 KB)

    This paper describes design, development, characterization, and operation of a two-terminal, high-current, high-voltage silicon four-layer diode. The main feature of this new four-layer diode is a voltage-current characteristic which is, prior to switching, similar to that of an avalanche diode. This property is achieved by short-circuiting one emitter-base junction, resulting in a grid-type emitt... View full abstract»

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  • High power gate-controlled switch

    Publication Year: 1970, Page(s):706 - 710
    Cited by:  Papers (14)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (600 KB)

    The ratings of GCS's have remained around 10 amperes and 600 volts since the early 1960's. The problem of increasing the device's capability is therefore reviewed. Experimental results show that turn-off is governed by the diversion of the anode current through the gate,the sequence of junction recovery, the optimum gate drive timing, and the condition of a low impedance drive voltage below the ga... View full abstract»

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  • Epitaxial π-ν n-p-n high-voltage power transistors

    Publication Year: 1970, Page(s):711 - 716
    Cited by:  Papers (1)  |  Patents (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (520 KB)

    A new silicon power-transistor structure has been developed which expands the frontiers of power-switching performance and high-voltage power-handling capability. This new structure employs a unique π-ν (nearly intrinsic p- and n-type) epitaxial-layer construction which utilizes "overlay" emitter concepts to achieve improved volt-ampere densities and expanded second-breakdown performance... View full abstract»

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  • A discussion of the design and properties of a high-power transistor for single sideband applications

    Publication Year: 1970, Page(s):717 - 724
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (792 KB)

    This paper describes the efforts and results in developing a high-power transistor for single sideband application. Dependence of intermodulation distortion on device characteristics and usage is discussed. Emitter grid, interdigitated, and overlay structures are considered for the design with supporting evidence given for the eventual choice. An improved version of the original design was found n... View full abstract»

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  • A high-current metal—Semiconductor rectifier

    Publication Year: 1970, Page(s):725 - 731
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (560 KB)

    Schottky-barrier diodes have been in use for some time, but, in the main, only for small-signal applications. Now a large area (17K mils2) Schottky-barrier diode has been successfully fabricated for use as a high-current rectifier. The device has a rated Io of 50 amperes. Measured values of forward voltage drop at 50 amperes (dc) are typically less than 500 mV. The inherent speed charac... View full abstract»

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  • High peak-power LSA operation from epitaxial GaAs

    Publication Year: 1970, Page(s):732 - 738
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (664 KB)

    Gallium solution epitaxy, using a steady-state, temperature-gradient technique has been successfully used to grow high-quality, 150-µM thick gallium arsenide layers with less than 5 percent variation in electron density. A laser-probe, photoconductivity method has been used to precisely measure the relative variations of electron density. Using these epitaxial layers with 1.5-2 ×101... View full abstract»

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  • High-power IMPATT diodes on diamond heat sinks

    Publication Year: 1970, Page(s):739 - 743
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (520 KB)

    This paper presents calculated and experimental results which demonstrate that the performance of IMPATT diodes is significantly improved by the use of diamond heat sinks. Oscillator test results on germanium IMPATT diodes at 6.2 GHz indicate about 50 to 100 percent increase in power output for diamond versus copper heat-sinked units without compromising other oscillator characteristics. An increa... View full abstract»

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  • Thermal effects of the operation of high average power Gunn devices

    Publication Year: 1970, Page(s):744 - 750
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (712 KB)

    A lumped thermal resistance model is described for GaAs Gunn and LSA diodes. Thermal resistances are defined for the active layer, contact layer, bond interface, package and heat sink. This permits the calculation of tha maximum device temperature TM= T0+ P ΣiRiand the critical temperature difference across the active layer ΔTA= PR... View full abstract»

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  • A wide-band wattmeter for the measurement and analysis of power dissipation in semiconductor switching devices

    Publication Year: 1970, Page(s):750 - 755
    Cited by:  Papers (5)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (600 KB)

    A technique is presented for accurately measuring and displaying the magnitude and time function of the exchange and absorption of electrical energy in linear and nonlinear circuit elements such as semiconductor power switches. A novel electronic wattmeter with a wide-band (dc to 10 MHz) linear multiplier is used to observe the instantaneous product of the time-varying voltage and current in an ar... View full abstract»

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  • The forward voltage technique to measure junction temperatures of ac operating triacs

    Publication Year: 1970, Page(s):755 - 761
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (656 KB)

    The forward voltage drop Vfof an ac operating triac can be employed to indicate its junction temperature. The Vf, for a constant test current, is shown to decrease linearly with increasing temperature over the range of 20 to 125°C with measured slopes between -1.4 to -1.6 mV/°C. A sampling current must be used at the end of an applied power pulse and the cooling of ... View full abstract»

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  • Temperature measurements of ac operating triacs using a gate trigger current technique

    Publication Year: 1970, Page(s):761 - 765
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (488 KB)

    A description is given for the use of the threshold gate trigger current (IGT) of an ac operating triac to indicate its junction temperature. Because of different triggering mechanisms, the IGTof the first-quadrant gating has been found to have a more consistent temperature dependence than that of third-quadrant gating. The temperature dependence of IGTcan be descr... View full abstract»

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  • Computer-aided thermal analysis of power semiconductor devices

    Publication Year: 1970, Page(s):765 - 770
    Cited by:  Papers (18)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (552 KB)

    Thermal analysis of power semiconductor devices is often complicated by odd geometries and the nonlinear properties of materials. It is the type of problem that can best be handled by a computer. Fortunately, numerous general-purpose heat transfer programs have been written that can be applied to power semiconductor deyices. The majority of programs were written for other technologies (aircraft en... View full abstract»

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  • Thermal feedback in power semiconductor devices

    Publication Year: 1970, Page(s):770 - 782
    Cited by:  Papers (15)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1360 KB)

    Thermal feedback (TF) is an important aspect for the thermal management of semiconductor devices and high-power density integrated circuits. Different features of positive and negative TF in transistors are reviewed and summarized for the macroscopic domain. The thermal feedback mechanism is applied to the microscopic domain of noise fluctuations in semiconductor devices. It is argued that TF may ... View full abstract»

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  • Thermal instability in very small p-n junctions

    Publication Year: 1970, Page(s):782 - 787
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (608 KB)

    Thermally induced second breakdown is studied in very small 6- to 10-volt silicon diodes having uniform breakdown. The formation of a small high-current density region is observed optically at the onset of thermal breakdown. Incremental resistance measurements can be used to determine nondestructively the threshold current for thermal breakdown. The threshold temperature for thermal breakdown is m... View full abstract»

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Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it