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18-20 June 2012

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Displaying Results 1 - 25 of 143
  • 70th Device Research Conference Digest [front matter]

    Publication Year: 2012, Page(s):1 - 3
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  • Officers

    Publication Year: 2012, Page(s): ii
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  • [Title page]

    Publication Year: 2012, Page(s): iii
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  • Schedule of events

    Publication Year: 2012, Page(s):iv - v
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  • Table of contents

    Publication Year: 2012, Page(s):vi - xvii
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  • Plenary session [breaker page]

    Publication Year: 2012, Page(s):1 - 2
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  • Mapping a path to the beyond-CMOS technology for computation

    Publication Year: 2012, Page(s):3 - 6
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1127 KB) | HTML iconHTML

    This paper describes a methodology for benchmarking beyond CMOS exploratory devices for computation using metrics that can provide insights about the device fundamental operation. A more detailed investigation of circuits based upon two beyond-CMOS devices is given in the paper. First tunneling FET (TFET) circuits are compared to low power CMOS circuits. Then the All-Spin Logic device (ASLD) is de... View full abstract»

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  • Solid-state electronics and single-molecule biophysics

    Publication Year: 2012, Page(s):7 - 8
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (864 KB) | HTML iconHTML

    Biomolecular systems are traditionally studied using ensemble measurements and fluorescence-based detection. Among the most common in vitro applications are DNA microarrays to identify target gene expression profiles [1] and enzyme-linked immunosorbent assays (ELISA) to identify proteins [2]. While much can be determined with ensemble measurements, scientific and technological interest is rapidly ... View full abstract»

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  • Advanced device technologies for defense systems

    Publication Year: 2012, Page(s):9 - 12
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (455 KB) | HTML iconHTML

    The performance requirements of defense systems to detect small signals in the presence of clutter or large interferers, to see further than the adversary, and discriminate between targets in a complex environment, has driven the need for ever more capable device technologies for focal plane arrays (FPAs) and monolithic microwave integrated circuits (MMICs). This paper discusses the history, and c... View full abstract»

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  • Mems, sensors and harvestors [breaker page]

    Publication Year: 2012, Page(s):13 - 14
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  • High performance miniaturized NEMS sensors Toward co-integration with CMOS?

    Publication Year: 2012, Page(s):15 - 16
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (770 KB) | HTML iconHTML

    In this paper, we will present some possible emerging applications for Nano-Electro-Mechanical Systems (NEMS) and the interest of their co-integration with CMOS. We will compare some integration schemes and present mass sensing as a possible emerging application. In particular, experimental results on complex gas measurements with NEMS will be introduced. We will show that multi-physics simulation... View full abstract»

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  • Silicon monolithic MEMS + photonic systems

    Publication Year: 2012, Page(s):17 - 18
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (824 KB) | HTML iconHTML

    Opto-mechanical systems offer one of the most sensitive methods for detecting mechanical motion using shifts in the optical resonance frequency of the optomechanical resonator. Presently, these systems are used for measuring mechanical thermal noise displacement or mechanical motion actuated by optical forces. Meanwhile, electrostatic capacitive actuation and detection is the main transduction sch... View full abstract»

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  • Highly sensitive III–V nitride based piezoresistive microcantilever using embedded AlGaN/GaN HFET as ultrasonic detector

    Publication Year: 2012, Page(s):19 - 20
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (568 KB) | HTML iconHTML

    Summary form only given.We report, for the first time, an ultra high gauge factor of more than 3500 observed using AlGaN/GaN Heterostructure Field Effect Transistor (HFET) embedded GaN piezoresistive microcantilever. In addition, the deflection transduction signal from the HFET was utilized to determine dynamic bending as well as AC frequency response of the cantilever. Finally, the piezoresistive... View full abstract»

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  • Nanostructured thermoelectric energy conversion and refrigeration devices

    Publication Year: 2012, Page(s):21 - 22
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (675 KB) | HTML iconHTML

    Energy consumption in our society is increasing rapidly. A significant fraction of the energy is lost in the form of heat. In this talk we introduce thermoelectric devices that allow direct conversion of heat into electricity. A key requirement to improve the efficiency is to increase the Seebeck coefficient (S) and the electrical conductivity (σ) while reducing the electronic and lattice c... View full abstract»

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  • Piezotronics and piezo-phototronics

    Publication Year: 2012, Page(s):23 - 24
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (92 KB) | HTML iconHTML

    Piezoelectricity, a phenomenon known for centuries, is an effect that is about the production of electrical potential in a substance as the pressure on it changes. The most well known material that has piezoelectric effect is the provskite structured Pb(Zr, Ti)O3 (PZT), which has found huge applications in electromechanical sensors, actuators and energy generators. But PZT is an electri... View full abstract»

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  • Alternative graphene devices: beyond field effect transistors

    Publication Year: 2012, Page(s):24a - 24b
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1111 KB) | HTML iconHTML

    The future manufacturability of graphene devices depends on the availability of large-scale graphene fabrication methods. While chemical vapor deposition and epitaxy from silicon carbide both promise scalability, they are not (yet) fully compatible with silicon technology. Direct growth of graphene on insulating substrates would be a major step, but is still at a very early stage [1]. This has imp... View full abstract»

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  • Alternate transistor concept [breaker page]

    Publication Year: 2012, Page(s):25 - 26
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  • Novel double layer graphene transistors-bilayer pseudospin FETs and 2D-2D tunnel FETs

    Publication Year: 2012, Page(s):27 - 28
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (639 KB) | HTML iconHTML

    In this paper, bilayer pseudospin FET (BiSFET) is fabricated and tested for the condensate using Coulomb drag measurements in the double layer graphene system. The basic BiSFET structure can also be used as 2D-2D single particle tunnel FET, and the single particle h-h and e-e 2D-2D tunnel FETs, which is graphene's single-atom thickness could lead to more ideal interlayer tunneling characteristics ... View full abstract»

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  • Effect of interfacial phonon-plasmon modes on electrical transport in supported graphene

    Publication Year: 2012, Page(s):29 - 30
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (545 KB) | HTML iconHTML

    This paper discusses the effects of interfacial phonon-plasmon modes on electrical transport in supported graphene. The mobility in graphene supported on an insulating dielectric substrate (such as SiO2) is typically due to scattering by charged impurities, surface roughness and surface polar phonon (SPP) modes. Although impurity scattering is the dominant factor limiting electron mobil... View full abstract»

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  • Possible applications of topological insulator thin films for tunnel FETs

    Publication Year: 2012, Page(s):31 - 32
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (694 KB) | HTML iconHTML

    We have begun to explore the possibility of thin film three dimensional (3D) topological insulator (TI) based tunnel FETs (TFETs), specifically Bi2Se3 here, using quantum ballistic transport simulations with a tight-binding Hamiltonian in the atomic orbital basis including spin degrees of freedom. TI-based TFETs would be analogous in some ways to graphene nanoribbon TFETs, bu... View full abstract»

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  • SymFET: A proposed symmetric graphene tunneling field effect transistor

    Publication Year: 2012, Page(s):33 - 34
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (781 KB) | HTML iconHTML

    The expressions given in previous section, is for T = 0K. The room temperature results need to consider the Fermi distribution with integral over energy. The corresponding device parameters are labeled in the figures. A graphene length L = 100 nm is assumed. When the tunnel barrier is thicker, the resonant peak current decreases as expected (Figure 2 (a)). Thinner tgate offers better ga... View full abstract»

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  • Hybrid straintronics and spintronics: An ultra energy-efficient paradigm for logic and memory

    Publication Year: 2012, Page(s):35 - 36
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (759 KB) | HTML iconHTML

    Excessive energy dissipation during switching of logic and memory bits is the primary impediment to continued downscaling of electronic devices predicted by Moore's law. Nanomagnetic logic and memory switches are innately more energy-efficient than electronic switches because of correlated switching of spins that does not happen when charges are “switched” by moving them into and out... View full abstract»

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  • Graphene and topological insulator based transistors: Beyond computing applications

    Publication Year: 2012, Page(s):37 - 38
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (512 KB) | HTML iconHTML

    Silicon based field effect transistors (FET) have been the foundation of computing industries for decades. As we approach the end of the Moore's law scaling, there have been increasing interests and efforts to explore transistors based on many "emerging" (non-Si) materials that may replace or supplement Si in future electronics and computing devices. However, Si and Si-MOSFETs remain exceptionally... View full abstract»

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  • Poster session [breaker page]

    Publication Year: 2012, Page(s):39 - 44
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  • Al2O3/InSb/Si quantum well MOSFETs having an ultra-thin InSb layer

    Publication Year: 2012, Page(s):45 - 46
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (909 KB) | HTML iconHTML

    The fabrication and the properties of Al2O3-InSb-Si QW MOSFETs having an ultra thin InSb channel layer is reported. The good characteristic of ID-VD with an transconductance of 67 mS/mm demonstrates that the ultra thin InSb channel layer grown directly on Si can be used for MOSFET channels. The results show that the InSb/Si pseudomorphic quantum well MOS... View full abstract»

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