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IEE Colloquium on Advances in Semiconductor Devices (Ref. No. 1999/025)

26 Jan 1999

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Displaying Results 1 - 7 of 7
  • Large signal frequency dispersion effects in indium phosphide HEMTs

    Publication Year: 1999, Page(s):8/1 - 810
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (960 KB)

    The work uses RF gain compression behaviour to investigate the existence of large signal frequency dispersion in lattice matched and pseudomorphic indium phosphide HEMTs. A comparison of DC model parameters and parameters obtained by optimising the model to fit to measured gain compression of a Class AB amplifier suggests that the RF knee voltage is larger than that observed in DC measurements. It... View full abstract»

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  • Metamorphic GaAs HEMTs with fT of 200 GHz

    Publication Year: 1999, Page(s):7/1 - 7/5
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (312 KB)

    We report the RF performance of 0.12 μm T-gate GaAs based metamorphic HEMTs with a composite In0.53Ga0.47As/In0.30Ga0.70 As channel. 2×50 μm wide devices demonstrated an fT of 200 GHz, the highest of any three terminal GaAs based device reported to date. In addition, 2×25 μm devices demonstrated 9.0 dB MAG at 94 GHz showi... View full abstract»

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  • Progress in SiGe heterostructure devices

    Publication Year: 1999, Page(s):6/1 - 6/6
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (424 KB)

    Since a few years SiGe/Si heterodevices have entered the semiconductors world. In particular, the SiGe heterobipolar transistor (SiGe HBT) has demonstrated a record fmax value of 160 GHz. The SiGe hetero-field effect transistor (SiGe HFET) is presently catching up in performance with a speed of 120 GHz. This paper reviews device and circuit results. An important issue is the compatibili... View full abstract»

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  • 4H-SiC SIT device for RF heating applications

    Publication Year: 1999, Page(s):2/1 - 2/4
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (284 KB)

    In this paper, the optimisation procedure for a static induction transistor (SIT) in silicon carbide is described and its application in a typical RF heating circuit is presented. A field plate edge termination is optimised for a 10 μm thick epitaxial layer with doping in the range 1015 cm-3 to 1016 cm-3. Results show a breakdown voltage of 1280 V, co... View full abstract»

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  • High temperature electronics-possibilities and prospects

    Publication Year: 1999, Page(s):1/1 - 1/4
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (316 KB)

    Many existing silicon devices are capable of operating at temperatures well in excess of the traditional 125 degree limit. This paper outlines the requirement for such devices and the main application areas, describes the limiting factors of using devices at high temperatures (both electronic and packaging issues) and considers how new materials will extend the operating range upwards View full abstract»

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  • Silicon carbide microwave MESFET research at DERA Malvern

    Publication Year: 1999, Page(s):3/1 - 3/6
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (600 KB)

    Microwave devices fabricated in SiC offer huge benefits compared to conventional GaAs based devices, in particular offering enhanced power handling and higher voltage operation. Here we report on progress towards the establishment of a power MESFET process, including highly encouraging DC and S-parameter results from single finger devices, and initial results for multi-finger power devices. Simula... View full abstract»

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  • Fabrication and characterisation of AlGaN/GaN MODFETs for microwave power applications

    Publication Year: 1999, Page(s):4/1 - 4/5
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (284 KB)

    AlGaN/GaN MODFETs reveal a very large potential to be used as microwave power devices in future communication, navigation and military surveillance systems. A increasing number of companies and research institutes are currently engaged in GaN/AlGaN FET device research headed by US American groups. In this paper we discuss the potential and the challenge of MODFETs based on GaN/AlGaN with special e... View full abstract»

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