Fast deposition of /spl mu/c-Si:H films from Ar-diluted SiH/sub 4/ plasma in RF glow discharge

Using Ar as diluent for SiH/sub 4/ in RF glow discharge, we obtained undoped and doped /spl mu/c-Si:H films having high /spl sigma//sub D/ low /spl Delta/E and low /spl alpha/; exhibiting sharp crystallographic rings in the electron diffraction pattern, c-Si grains of 100 /spl Aring/ diameter in the micrograph and intense Raman peak around 520 cm/sup -1/. The films were prepared at a remarkably high deposition rate of 50-70 /spl Aring//min contributed from SiH/sub 4/ having a flow rate of 1 SCCM, and hence it provides enormous promise towards an economic throughput in the fabrication of devices using this material.