Nonplanar InGaAs Gate Wrapped Around Field-Effect Transistors

Nonplanar In
_0.53
Ga
_0.47
As gate wrap around field-effect transistors (GWAFETs) with atomic-layer deposited high-
k
dielectric and metal gate have been demonstrated in this paper. By applying novel device structure and optimizing fabrication process, In
_0.53
Ga
_0.47
As GWAFETs exhibit significant performance improvements over planar MOSFETs on both current drive capability and electrostatics control. In
_0.53
Ga
_0.47
As GWAFETs with fin width (
W
\(_{\mathrm {{fin}}}\)
) 40–200 nm have been fabricated. Devices with narrower
W
\(_{\mathrm {{fin}}}\)
exhibit higher drive current, transconductance, and better short channel effect control, which demonstrates the scalability of nonplanar In
_0.53
Ga
_0.47
As GWAFETs. Subthreshold swing of 80 mV/decade and drain-induced barrier lowering of 20 mV/V have been achieved by 40-nm
W
\(_{\mathrm {{fin}}}\)
and 140-nm
L
\(_{{g}}\)
In
_0.53
Ga
_0.47
As GWAFETs.