A novel multiple-valued logic gate using resonant tunneling devices

We demonstrate a novel multiple-valued logic (MVL) gate using series-connected resonant tunneling devices. Logic operation is based on the control of the switching sequence of these devices through the modulation of their peak currents by the input signal. We obtain the literal function, one of fundamental MVL functions, by integrating three InGaAs-based resonant-tunneling diodes with two HEMT's on an InP substrate. The gate configuration is greatly simplified compared with a conventional literal gate employing CMOS circuits.