Comments on "A new type of transistor: CBT"

For original paper see B. Kang, W. Zhao, L. Dong and Y. Situ (ibid., vol.40, pp.1805-1811, 1993). In the above paper, a bipolar device named channel-base transistor (CBT), consisting of a vertical JFET structure operating with its gate forward-biased, has been presented. This correspondence is aimed at recalling that the CBT cannot be viewed as a "new" device, as was stated. Also, some conclusions derived concerning the physics of operation of the CBT are discussed on the basis of the theoretical and experimental work available in the literature.<
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