Breakdown and conduction phenomena in MIS structures

The breakdown and conduction characteristics in metal-insulator-semiconductor (MIS) structures having a thin silicon nitride layer (5.8 to 8.3 nm) as insulator were investigated. The nitride layer was grown on a silicon wafer by low-pressure chemical vapor deposition. The characteristics of breakdown voltage, time-dependent dielectric breakdown, and current vs. voltage of the structure were measured.<
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