High d/gamma ratio in 940nm two-waveguide asymmetric epitaxial structures

d/gamma is the main parameter in designing high brightness diode lasers. The two-waveguide asymmetric structures consist of an active region waveguide that includes a QW and an optical trap on the n side of the active region. The radiation field is shared between these two waveguides and correspondingly its extent in the QW relative to its overall extent in the structure is diminished.