Low threshold current continuous-wave GaInNAs/GaAs VCSELs

Vertical cavity surface-emitting lasers (VCSELs) emitting near 0.85 /spl mu/m are becoming increasingly important for short-haul optical fiber transmission systems. These devices benefit from highly reflective and thermally conductive all-epitaxial GaAs-based mirrors and efficient transverse confinement through AlAs-oxide dielectric apertures. Extending this commercially-established technology to wavelengths in the 1.3-1.6 /spl mu/m range allows for dramatically increased transmission bandwidth and distance in conventional single- and multi-mode fiber. GaInNAs is a promising active layer material grown on GaAs that can achieve 1.3 /spl mu/m emission, and electrically pulsed broad-area GaInNAs VCSELs have been realized. We demonstrate for the first time low-threshold (/spl sim/1 mA) GaInNAs VCSELs emitting at a wavelength of 1.2 /spl mu/m under continuous-wave room temperature operation.