Thermal decomposition of silicon-rich oxides deposited by the LPCVD method

Silicon-rich oxide (SiO
x
, 04
) and oxygen as the reactant gasses. The films were annealed at temperatures of 800 °C, 900 °C, 1000 °C and 1100 °C to induce the separation of excess silicon in the SiO
x
films into nanosized crystalline silicon particles inside an amorphous SiO
x
matrix. The size of the silicon particles was determined using Raman spectroscopy.