Interface-state-induced degradation of GIDL current in n-MOSFETs under hot-carrier stress

The dependence of increase in post-stress gate-induced-drain-leakage (GIDL) current in n-MOSFET's on creation of interface states (/spl Delta/D/sub it/) during hot-carrier stress with V/sub G/ = 0.5 V/sub D/ was investigated. An interface-trap-assisted tunneling conduction mechanism is proposed to account for the increase. The stress method of V/sub G/ = 0.5 V/sub D/ can generate a lot of interface traps near the valence band in thermal oxide samples, which is considerably suppressed in nitrided oxide samples. From the linear relationship between increase in post-stress GIDL current and created interface-state density during hot-carrier stress, /spl Delta/D/sub it/ values can be estimated.