Laser Diodes for Gas Sensing Emitting at 3.06 $\mu$m at Room Temperature

Type-I quantum-well laser diodes with an active region constituted of GaInAsSb-AlGaInAsSb are reported. Broad-area lasers have demonstrated a threshold current density of 255 A/cm
²
at room temperature. Distributed-feedback lasers have been operated in the continuous-wave regime at 20°C with a wavelength of 3.06 μm, a threshold current of 54 mA, and an output power of 6 mW.