100-mW high-power angled-stripe superluminescent diodes with a new real refractive-index-guided self-aligned structure

We have developed 100-mW high-power angled-stripe superluminescent diodes with a new angled-stripe real refractive-index guided self-aligned structure. The structure has a GaAlAs optical confinement layer on a planar active layer and an inclined current injection stripe by 5/spl deg/ with respect to the facet normal. The structure gives small internal loss (/spl sim/10 cm/sup -1/) and facet power reflectivity less than the order of 10/sup -6/. As a result, the output power as high as 105 mW at a low operating current of 270 mA is obtained with less than 3% spectral modulation and 10.5 nm full width at half maximum (FWHM) spectral width.