The fabrication of a broad-spectrum light-emitting diode using high-energy ion implantation

High-energy ion implantation is used to spatially modify the bandgap of a 1.5-μm laser structure to fabricate a broad spectrum light emitting diode (LED). An increase in the emission full width half maximum (FWHM) from 28 nm to 90 nm is observed. An absorbing section at one end of the device is used to suppress lasing operation and remove Fabry-Perot noise.