A new analytical GTO-model for circuit applications

This paper presents an analytical model of a GTO based on the calculation of the charge carrier distribution in the base layers by an approximation of the time derivatives. All essential effects like avalanche breakdown, recombination, backinjection into the high doped emitter and conductivity modulation are included. The reliability of the method is confirmed by a comparison of the simulation and measurement results and by the capability of the model in mastering very complex application circuits.<
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