Nonlinear on-chip capacitor characterization

The paper deals with a modification of the CBCM method for nonlinear on-chip capacitance characterization. The proposed modification uses two DC swept sources to measure the whole nonlinear Q-v characteristic in both polarities without the necessity to switch the object being measured. A test-chip implementing the method was designed and manufactured in the 0.35 mum CMOS process. It was used for MOSCAP characterization in the full operating voltage range.