Very Low Noise in 90nm Node RF MOSFETs using a New Layout

The authors have directly measured a record low minimum noise figure (NF
_min
) of 0.46 dB at 10 GHz, along with a high 16.6 dB associated gain, in an 8-finger 90 nm node MOSFET (L
_G
= 65nm) without de-embedding. At 18 GHz, NF
_min
was 0.83 dB with 13.5 dB gain. This was achieved using a microstrip line layout to screen the RF noise generated by the lossy substrate