1-$\mu\hbox{m}$ Enhancement Mode GaAs N-Channel MOSFETs With Transconductance Exceeding 250 mS/mm

In this letter, 1-mum GaAs-based enhancement-mode n-channel devices with channel mobility of 5500 cm
²
/Vmiddots and g
_m
exceeding 250 mS/mm have been fabricated. The measured device parameters including threshold voltage V
_th
, maximum extrinsic transconductance g
_m
, saturation current I
_dss
, on-resistance R
_on
, and gate current are 0.11 V, 254 mS/mm, 380 mA/mm, 4.5 Omegamiddotmm, and < 56 pA for a first wafer and 0.08 V, 229 mS/mm, 443 mA/mm, 4.5 Omegamiddotmm, and < 90 pA for a second wafer, respectively. With an intrinsic transconductance g
_mi
of 434 mS/mm, GaAs enhancement-mode MOSFETs have reached expected intrinsic device performance