Improved FET noise model extraction method for statistical model development

An analytic method is presented for extracting gate-source leakage resistance, R/sub gs/, from S-parameter measurements /spl ges/500 MHz. Subsequent noise source parameter extraction is frequency independent. Consequently, model parameter optimization is eliminated and physical correlations between parameters preserved. Compact statistical noise models can then be developed using the Principal Component method. R/sub gs/ also improves modeled low-frequency stability characteristics.<
>