Integration of LED's and GaAs circuits by MBE regrowth

Fully processed VLSI GaAs MESFET circuits, available through the MOSIS service, have recently been shown to be electrically stable after 3-h thermal cycles at 500/spl deg/C. It is therefore feasible to epitaxially regrow photonic device heterostructures directly on high-density electronic circuits yielding monolithic optoelectronic VLSI circuits. The MBE growth, planarization, and LED fabrication of the first optoelectronic circuit using this novel integration technique are described.<
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