A heterojunction bipolar transistor with an epitaxially regrown emitter

We propose a new structure for heterojunction bipolar transistors (HBTs) suitable for scaling down and higher speed operation. For this structure, we have developed a new process technology, which is epitaxial re-growth of an emitter onto a base. An InGaAs/InAlAs HBT with an emitter epitaxially regrown on a base has been demonstrated for the first time.<
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