A 4-Mbit DRAM with 16-bit concurrent ECC

A 256 K-word*16-bit dynamic RAM with concurrent 16-bit error correction code (ECC) has been built in 0.8- mu m CMOS technology, with double-level metal and surrounding high-capacitance cell. The cell measures 10.12 mu m/sup 2/ with a 90-fF storage capacitance. A duplex bit-line architecture used on the DRAM provides multiple-bit operations and the potential of high-speed data processing for ASIC memories. The ECC checks concurrently 16-bit data and corrects a 1-bit data error. This ECC method can be adapted to higher-bit ECC without expanding the memory array. The ratio of ECC area to the whole chip is 7.5%. The cell structure and the architecture allow for expansion to 16-Mb DRAM. The 4-Mb DRAM has a 70-ns RAS access time without ECC and a 90-ns RAS access time with ECC.<
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