On the effect of hot-carrier stressing on MOSFET terminal capacitances

The hot-carrier effect on the MOSFET is studied by measuring the terminal capacitance of a MOSFET before and after bias voltage stressing. It is concluded that under DC bias stressing, hot electrons are trapped near the drain end of the device. Capacitance observations can be understood in terms of a model in which the trapped-electron distribution peaks very close to the drain-channel metallurgical junction.<
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