High-power 2.0 mu m InGaAsP laser diodes

Data detailing the performance of strained-layer InGaAs/InGaAsP double-quantum-well laser diodes operating at 2.0 mu m are presented. The total external efficiency and maximum power achieved are 55% and 1.6-W continuous wave (CW), respectively, from a 200- mu m gain-guided laser diode. Measurements on gain-guided broad area devices yield an internal efficiency of 0.73 with a distributed loss coefficient, alpha , of 7.5 cm/sup -1/. The measured threshold current density is 300 A/cm/sup 2/ for a 2-mm-long broad area device operated CW at 25 degrees C.<
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